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Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
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Influence of high-frequent signals on the hold current behaviour of snapback ESD protection diodes - YouTube
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Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
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Electronics | Free Full-Text | Simulation Study of Low Turn-Off Loss and Snapback-Free SA-IGBT with Injection-Enhanced p-Floating Layer
Double Snapback Characteristics in High-Voltage nMOSFETs and the Impact to On-Chip ESD Protection Design
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Figure 1 from Modeling MOS snapback for circuit-level ESD simulation using BSIM3 and VBIC models | Semantic Scholar
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
![Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0026271414000304-gr6.jpg)